Low turn-off switching energy 1200 V IGBT module

Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344) Pub Date : 2002-12-10 DOI:10.1109/IAS.2002.1043831

J. Yamada, Y. Yu, Y. Ishimura, J. Donlon, E. Motto

引用次数: 14

Abstract

A new 5th generation IGBT module with low turn-off energy has been developed. The module utilizes IGBT chips optimized for high frequency industrial power supplies in applications such as X-ray, MRI (magnetic resonance imaging), and induction heating. This technology is designed to provide a simplified cost effective alternative to parallel discrete MOSFETs in these applications.

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低关断开关能量1200v IGBT模块

研制了一种低关断能量的新型第五代IGBT模块。该模块采用IGBT芯片，针对x射线、MRI(磁共振成像)和感应加热等应用中的高频工业电源进行了优化。该技术旨在为这些应用中的并联离散mosfet提供一种简化的经济有效的替代方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344)

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