Chloropolymer precursor utilization for the nanostructured Co-containing carbon layers formation on silicon substrate

O. V. Krivozubov, Yu. G. Kryazhev, I. V. Anikeeva, N. A. Davletkil’deev, D. Sokolov, O. N. Semenova
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Abstract

The possibility of nanostructured Co-containing carbon layers formation by means of the approach based on polyvinyl chloride alkaline dehydrochlorination in dimethyl sulfoxide in the presence of Co-nitrate is shown. From the mentioned reaction mixture, the layers of the carbon polymer precursor – polyvinylene formed during dehydrochlorination were deposited on the silicon wafer by spin coating. The obtained layers heat treatment up to 400 °C results in the formation of Co-carbon nanostructured continuous layers which structure is studied by the atomic force microscopy.The possibility of nanostructured Co-containing carbon layers formation by means of the approach based on polyvinyl chloride alkaline dehydrochlorination in dimethyl sulfoxide in the presence of Co-nitrate is shown. From the mentioned reaction mixture, the layers of the carbon polymer precursor – polyvinylene formed during dehydrochlorination were deposited on the silicon wafer by spin coating. The obtained layers heat treatment up to 400 °C results in the formation of Co-carbon nanostructured continuous layers which structure is studied by the atomic force microscopy.
利用氯聚合物前驱体在硅衬底上形成纳米结构含碳共聚物层
在硝酸钴存在的情况下,用聚氯乙烯碱脱氢氯化法在二甲亚砜中形成纳米结构的含碳共聚物层的可能性。从上述反应混合物中,通过自旋涂层将脱氢氯化过程中形成的碳聚合物前驱体-聚乙烯层沉积在硅片上。将得到的层加热至400°C,形成co -碳纳米结构的连续层,其结构通过原子力显微镜进行了研究。在硝酸钴存在的情况下,用聚氯乙烯碱脱氢氯化法在二甲亚砜中形成纳米结构的含碳共聚物层的可能性。从上述反应混合物中,通过自旋涂层将脱氢氯化过程中形成的碳聚合物前驱体-聚乙烯层沉积在硅片上。将得到的层加热至400°C,形成co -碳纳米结构的连续层,其结构通过原子力显微镜进行了研究。
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