Soft Error Rates with Inertial and Logical Masking

Fan Wang, V. Agrawal
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引用次数: 14

Abstract

We analyze the neutron induced soft error rate (SER). An induced error pulse is modeled by two parameters, probability of occurrence and probability density function of the pulse width. We calculate failures in time (FIT) rates for ISCAS85 benchmark circuits. A comparison with measured SER for SRAMs shows better relevance of our work over other published work. Our CPU times are reasonable; benchmark circuit C1908 with 880 gates requires only 1.14seconds. Further, we study the influence of circuit topology on SER. We find that for some circuits with many levels of logic there exists a critical single event transient (SET) width. For smaller induced pulse width the SER depends not on the size of the circuit but only on the gates near the output, and only those need to be protected. For an inverter chain in TMSC035 technology, the critical width is between 25ps and 50ps. For a shallow circuit, e.g., a ripple-carry adder, the critical SET width may not exist.
具有惯性和逻辑掩蔽的软错误率
分析了中子诱导软错误率(SER)。用脉冲宽度的概率密度函数和发生概率函数两个参数对诱导误差脉冲进行建模。我们计算了ISCAS85基准电路的失败率。与sram测量SER的比较表明,我们的工作比其他已发表的工作具有更好的相关性。我们的CPU时间是合理的;具有880个门的基准电路C1908只需要1.14秒。进一步,我们研究了电路拓扑结构对SER的影响。我们发现,对于一些具有多层逻辑的电路,存在一个临界单事件暂态(SET)宽度。对于较小的感应脉冲宽度,SER不取决于电路的大小,而只取决于输出附近的门,并且只有那些需要被保护。对于采用TMSC035技术的逆变器链,临界宽度在25ps到50ps之间。对于浅电路,例如,纹波进位加法器,临界SET宽度可能不存在。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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