Multi-level resistive switching in HfO2/Al2O3/HfO2 based memristor on transparent ITO electrode

2020 International Conference on Electronics, Information, and Communication (ICEIC) Pub Date : 2020-01-01 DOI:10.1109/ICEIC49074.2020.9051025

C. Mahata, Sungjun Kim

引用次数: 4

Abstract

RRAM with multilevel resistance states of HfO2/Al2O3/HfO2 based memristor on transparent ITO electrode is presented. Trilayer structure proves to be promising for multilevel memory state under DC voltage condition. Under different SET current compliance and RESET voltage the memristor device shows reliable multi-level resistive switching characteristics.

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透明ITO电极上HfO2/Al2O3/HfO2基忆阻器的多级电阻开关

提出了基于HfO2/Al2O3/HfO2的忆阻器在透明ITO电极上具有多电平电阻状态的RRAM。在直流电压条件下，三层结构是一种很有前途的多级存储结构。在不同的SET电流顺应性和RESET电压下，忆阻器表现出可靠的多级阻性开关特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2020 International Conference on Electronics, Information, and Communication (ICEIC)

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