M. Ponce-Silva, J. L. Bautista, A. Tapia, Caren I. Nicolas, Teresa R. Granados, Ismael Araujo
{"title":"Parallel-Resonant Inverter with Two Current Sources: Analysis and design methodology","authors":"M. Ponce-Silva, J. L. Bautista, A. Tapia, Caren I. Nicolas, Teresa R. Granados, Ismael Araujo","doi":"10.1109/CIEP.2010.5598849","DOIUrl":null,"url":null,"abstract":"The steady state analysis and design methodology of the Parallel-Resonant Inverter with Two Current Sources is presented in this paper. The analyzed circuit is the dual of the half bridge series resonant voltage source inverter and based in the principle of duality, a very simple design methodology for resonance condition is developed. An example design with the following specifications was simulated and implemented: Power 100 W, frequency 150 kHz, and feeding voltage 180 V. The results validate the design methodology and indicate that the best choice for the switches is the IGBT instead of an array of a MOSFET in series with a diode.","PeriodicalId":147489,"journal":{"name":"12th IEEE International Power Electronics Congress","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th IEEE International Power Electronics Congress","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CIEP.2010.5598849","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The steady state analysis and design methodology of the Parallel-Resonant Inverter with Two Current Sources is presented in this paper. The analyzed circuit is the dual of the half bridge series resonant voltage source inverter and based in the principle of duality, a very simple design methodology for resonance condition is developed. An example design with the following specifications was simulated and implemented: Power 100 W, frequency 150 kHz, and feeding voltage 180 V. The results validate the design methodology and indicate that the best choice for the switches is the IGBT instead of an array of a MOSFET in series with a diode.