Novel high speed differential CMOS flip-flop for ultra low-voltage appications

Y. Berg
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引用次数: 10

Abstract

In this paper we present a novel ultra-low-voltage (ULV) CMOS flip-flop. The ULV flip-flop offers increased speed compared to other FF's for low supply voltages. The pulse generator (PG) circuit in a conventional sense amplifier SAFF is replaced by a high-speed tristate edge generator (EG) with a rise- and fall-time less than 1/10 of an inverter operating with the same supply voltage. In essence the delay of the ultra-low-voltage FF (UFF) presented in this paper is located in the latch stage. In terms of maximum operating frequency for ULV operation the UFF may be used at frequencies 10 times compared to more conventional FF's. The power-delay-product (PDP) of the UFF is significantly reduced accordingly. The simulated data presented is obtained using the Spectre simulator provided by Cadence and valid for a 90nm TMC CMOS process with inherent threshold voltages of 250mV. The transistors used for the low voltage FF are minimum sized.
用于超低电压应用的新型高速差分CMOS触发器
本文提出了一种新型的超低电压(ULV) CMOS触发器。与其他FF相比,ULV触发器在低电源电压下提供了更高的速度。用高速三态边缘发生器(EG)代替传统感测放大器SAFF中的脉冲发生器(PG)电路,其上升和下降时间小于在相同电源电压下工作的逆变器的1/10。从本质上讲,本文提出的超低电压FF (UFF)的延时位于锁存阶段。就超低电压操作的最大工作频率而言,UFF的使用频率可能是传统FF的10倍。UFF的功率延迟积(PDP)也相应显著降低。本文给出的仿真数据是使用Cadence提供的Spectre模拟器获得的,并且对固有阈值电压为250mV的90nm TMC CMOS工艺有效。用于低压FF的晶体管尺寸最小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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