On the integration of CMOS with hybrid crystal orientations

M. Yang, V. Chan, S. Ku, M. Ieong, L. Shi, K. Chan, C. Murthy, R. Mo, H.S. Yang, E. A. Lehner, Y. Surpris, F. Jamin, P. Oldiges, Y. Zhang, B. To, J. Holt, S. Steen, M. Chudzik, D. Fried, K. Bernstein, H. Zhu, C. Sung, J. Ott, D. Boyd, N. Rovedo
{"title":"On the integration of CMOS with hybrid crystal orientations","authors":"M. Yang, V. Chan, S. Ku, M. Ieong, L. Shi, K. Chan, C. Murthy, R. Mo, H.S. Yang, E. A. Lehner, Y. Surpris, F. Jamin, P. Oldiges, Y. Zhang, B. To, J. Holt, S. Steen, M. Chudzik, D. Fried, K. Bernstein, H. Zhu, C. Sung, J. Ott, D. Boyd, N. Rovedo","doi":"10.1109/VLSIT.2004.1345455","DOIUrl":null,"url":null,"abstract":"Design and integration issues have been investigated for the hybrid orientation technology (HOT), i.e. device isolation, epitaxy and dopant implantation. Ring oscillators using HOT CMOS have been demonstrated for the first time, with L/sub poly/ about 85nm and t/sub ox/=2.2nm, resulting in 21% improvement compared with control CMOS on (100) orientations.","PeriodicalId":297052,"journal":{"name":"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"38","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2004.1345455","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 38

Abstract

Design and integration issues have been investigated for the hybrid orientation technology (HOT), i.e. device isolation, epitaxy and dopant implantation. Ring oscillators using HOT CMOS have been demonstrated for the first time, with L/sub poly/ about 85nm and t/sub ox/=2.2nm, resulting in 21% improvement compared with control CMOS on (100) orientations.
杂化晶体取向CMOS集成研究
研究了混合取向技术的设计和集成问题,即器件隔离、外延和掺杂剂注入。利用HOT CMOS首次演示了环形振荡器,L/sub poly/约为85nm, t/sub ox/=2.2nm,在(100)取向上比控制CMOS提高了21%。
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