Reliability estimation of transistor switches in push-pull DC/DC hard switching converter

P. Prodanov, D. Dankov
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引用次数: 2

Abstract

Power semiconductors have a significant importance to reliability of electronic power convertors. In recent years there are an elements with higher parameters, high efficiency and low power losses. This requirements also can be applied into the power converters. This can be used to determine their reliability parameters and its estimation. Probability of failure-free operation depends on type of elements, their electrical and thermal modes, quality and environmental conditions. In this paper are consider reliability parameters of three type of power semiconductors – SiC MOSFET, “classic” MOSFET and IGBT transistors.
推挽式DC/DC硬开关变换器中晶体管开关的可靠性评估
功率半导体对电子电源变换器的可靠性具有重要意义。近年来出现了一种参数高、效率高、功耗低的元件。这一要求也适用于电源变换器。这可用于确定其可靠度参数及其估计。无故障运行的可能性取决于元件的类型,它们的电气和热模式,质量和环境条件。本文研究了三种功率半导体器件——SiC MOSFET、“经典”MOSFET和IGBT晶体管的可靠性参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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