A 200mW D-band Power Amplifier with 17.8% PAE in 250-nm InP HBT Technology

2020 15th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2021-01-10 DOI:10.1109/EuMIC48047.2021.00012

Ahmed S. H. Ahmed, M. Seo, A. Farid, M. Urteaga, J. Buckwalter, M. Rodwell

引用次数: 23

Abstract

We report a compact and high efficiency D-band power amplifier in 250nm InP HBT technology. A compact and low loss 8:1 transmission line power combiner is demonstrated. The three-stage power amplifier combines 8 capacitively linearized common-base power cells. The amplifier has 23dBm peak power with 17.8% power added efficiency (PAE) and 16.5dB associated large-signal gain at 131GHz. At 131GHz, the small-signal gain is 21.9dB. The small-signal 3dB-bandwidth is 125.8-145.8GHz. Over the 127-151GHz bandwidth, the saturated output power is greater than 22.3dBm with greater than 15% associated PAE. The amplifier occupies 1.34mm2 die area and consumes 1.1W DC power. To the authors' knowledge, this result demonstrates a record PAE.

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采用250nm InP HBT技术，PAE为17.8%的200mW d波段功率放大器

我们报道了一种采用250nm InP HBT技术的紧凑高效d波段功率放大器。介绍了一种紧凑、低损耗的8:1传输线功率合成器。三级功率放大器由8个电容线性化的共基功率电池组成。该放大器的峰值功率为23dBm，功率附加效率(PAE)为17.8%，131GHz时的大信号增益为16.5dB。在131GHz时，小信号增益为21.9dB。小信号3db带宽为125.8-145.8GHz。在127 ~ 151ghz带宽范围内，饱和输出功率大于22.3dBm，相关PAE大于15%。放大器的芯片面积为1.34mm2，直流功耗为1.1W。据作者所知，这一结果显示了创纪录的PAE。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2020 15th European Microwave Integrated Circuits Conference (EuMIC)

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