Photovoltaic response of N-doped graphene-based photodetector

Abstract

In this paper, photovoltaic response has been found in an N-doped graphene based photodetector with metal-graphene-metal structure. Raman and XPS spectra indicate that nitrogen atoms are doped into the graphene after synthesized in a CVD system by introducing CH4 and NH3. With the semiconducting behavior of I-V curves, N-doping graphene exhibits an opened band-gap, which generates photocurrent under light excitation.