LT GaAs delta-doped with In: enhanced As excess, In-Ga intermixing, As cluster array ordering

N. Bert, V. Chaldyshev, A. Suvorova, N. Faleev, A. E. Kunitsyn, Y. Musikhin, V. Preobrazhenskii, M. A. Putyato, B. Semyagin, P. Werner
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引用次数: 0

Abstract

The effects of indium incorporation in GaAs grown by MBE at low substrate temperature (LT GaAs) have been studied. The 0.04% indium doping is shown to provide an increase in the As excess along with improved crystal quality. The In-Ga intermixing is found to enhance by almost two orders of magnitude due to a high point defect concentration in LT GaAs. The effective activation energy of the intermixing is determined from TEM measurements to be 1.1 eV. The As precipitation kinetics is found to be quicker in In-free regions than within the In-containing layers. Using these observations, we successfully formed a 30 nm period perfect superlattice consisting of thin (double cluster diameter) As cluster sheets separated by cluster-free LT GaAs spacers.
掺In的LT GaAs δ:增强As过量,In- ga混合,As簇阵列有序
研究了低温MBE生长GaAs中铟掺杂量的影响。0.04%的铟掺杂增加了砷的过剩量,提高了晶体质量。由于在LT GaAs中存在较高的点缺陷浓度,因此发现in - ga的混合增强了近两个数量级。TEM测量结果表明,混合反应的有效活化能为1.1 eV。砷的析出动力学在无in区比在含in层更快。利用这些观察结果,我们成功地形成了一个30 nm周期的完美超晶格,由无团簇的LT GaAs间隔层隔开的薄(双团簇直径)As团簇片组成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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