High Performance CMOS Voltage Level Shifters Design for Low Voltage Applications

Ananya Kapoor, Chaitanya Shanker Jha, Ayush Thapar, C. I. Kumar
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Abstract

To convert signals from one logic level or voltage level to another, a level shifter circuit is used in analog and digital integrated circuits (IC’s). It is also known as a voltage level translator or a logic-level shifter. An integrated circuit voltage level changer allows for compatibility across integrated circuits with various voltage needs. In this work, a voltage level shifter that efficiently converts voltage from the subthreshold area to the super-threshold region while reducing propagation latency is introduced. The proposed circuit improves power efficiency and delays by employing a low voltage converter, one Pull Down and one Pull Up CMOS network. We simulate the proposed design in 45nm, 65nm, 90nm and 180nm CMOS technologies. The simulated result shows that, by employing the proposed level shifter an improvement of 69.12% in propagation delay is observed as compared to recent designs in 90nm CMOS technology. In 45nm technology our design improves the propagation delay 67.07% compared to existing designs. In corner analysis the proposed technique gives better result as compared to the recently reported techniques.
低电压应用的高性能CMOS电压电平转换器设计
为了将信号从一个逻辑电平或电压电平转换到另一个逻辑电平或电压电平,电平转换电路用于模拟和数字集成电路(IC)。它也被称为电压电平转换器或逻辑电平移位器。集成电路电压电平转换器允许兼容不同电压需求的集成电路。在这项工作中,介绍了一种电压电平移位器,它可以有效地将电压从亚阈值区域转换到超阈值区域,同时减少传播延迟。该电路通过采用一个低压转换器、一个下拉和一个上拉CMOS网络来提高功率效率和延迟。我们在45nm、65nm、90nm和180nm的CMOS技术上对所提出的设计进行了仿真。仿真结果表明,与目前采用90nm CMOS技术的设计相比,采用该移电平器的传输延迟提高了69.12%。在45nm技术下,我们的设计与现有设计相比,传输延迟提高了67.07%。在角点分析中,与最近报道的方法相比,该方法得到了更好的结果。
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