GaN MMIC SPDTs for C-Ku band beam forming networks applications

A. Bentini, D. Palombini, D. Rampazzo
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引用次数: 9

Abstract

In this contribution two robust, broadband SPDTs designed in GaN MMIC technology operating in the C-Ku Band are presented. The first SPDT is an absorptive type switch featuring 1.7 dB average insertion loss and 30 dB minimum isolation. The second SPDT is a reflective type switch featuring 1 dB minimum insertion loss and 30 dB minimum isolation. Both SPDTs have the same fit form and function and can be implemented in star configuration to realize RF signal routing and distribution for analogue beam forming networks.
用于C-Ku波段波束形成网络的GaN MMIC spdt
本文介绍了两种采用GaN MMIC技术设计的在C-Ku波段工作的鲁棒宽带spdt。第一种SPDT是吸收型开关,平均插入损耗为1.7 dB,最小隔离度为30 dB。第二个SPDT是一个反射型开关,具有最小1 dB的插入损耗和最小30 dB的隔离。两种spdt具有相同的配合形式和功能,可以采用星形结构实现模拟波束形成网络的射频信号路由和分配。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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