A 3kV/1.5A/2kHz Compact Modulator for Nitrogen Ion Plasma Implantation

J. O. Rossi, M. Ueda, J. Barroso
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引用次数: 1

Abstract

To treat stainless steel surfaces by nitrogen plasma implantation we devised a solid-state compact modulator, in which a 8.0 muF capacitor discharges through a forward converter composed of a low blocking voltage IGBT switch (1.0 kV) and three step-up pulse transformers, rather than employing hard-tube devices such as in conventional plasma ion implantation pulsers, which are expensive and cumbersome. For this, by using a high- voltage resistive load of 2 kOmega and a low power DC charger of only 300 V/0.2 A we built a prototype to provide pulses of 3 kV/5 mus with rise time of about 1.0 mus at a repetition rate of 2 kHz.
用于氮离子等离子体注入的3kV/1.5A/2kHz紧凑型调制器
为了利用氮离子注入处理不锈钢表面,我们设计了一种固态紧凑型调制器,该调制器采用一个8.0 muF的电容器,通过一个由低阻压IGBT开关(1.0 kV)和三个升压脉冲变压器组成的正激变换器放电,而不是采用传统等离子离子注入脉冲器中昂贵且笨重的硬管器件。为此,通过使用2 kOmega的高压电阻负载和仅300 V/0.2 a的低功率直流充电器,我们构建了一个原型,以2 kHz的重复率提供3 kV/5 μ s的脉冲,上升时间约为1.0 μ s。
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