Lifetime estimation of p-channel power VDMOSFETs applied in automotive applications

N. Mitrović, S. Veljković, Z. Prijić, D. Danković
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引用次数: 1

Abstract

This paper presents research on the lifetime estimation of p-channel power VDMOSFETs, widely available in automotive and consumer applications. Lifetime and period of reliable work of these devices that present parts of the system also constraints the reliable operation mode of the system as a whole. Operation of these devices, especially operation under harsh conditions as in automotive applications, degrade VDMOSFET characteristics through time. Degradation of parameters leads to parametric failure of devices so that device no longer operates reliable, which is a problem for a consumer. Parameter of the VDMOSFETs that strongly impacts the lifetime is threshold voltage. Lifetime of devices used with different types of controlling signals is estimated using declared algorithms. Appropriate experiments have been carried out with the goal to obtain experimental data that can be used for the algorithms implementations. Experimental setup as well as estimation algorithms are discussed in detail in the paper. Usage of the signals is compared and further analyzed from the developers, as well as from the consumer’s standpoint.
汽车用p沟道功率vdmosfet寿命估计
本文介绍了广泛应用于汽车和消费领域的p沟道功率vdmosfet的寿命估计研究。作为系统组成部分的这些设备的寿命和可靠工作周期也制约着整个系统的可靠运行模式。这些器件的运行,特别是在汽车应用等恶劣条件下的运行,随着时间的推移会降低VDMOSFET的特性。参数退化导致设备的参数失效,使设备不再可靠地运行,这对消费者来说是一个问题。对vdmosfet寿命影响较大的参数是阈值电压。使用不同类型的控制信号的设备的寿命是使用声明的算法估计。为了获得可用于算法实现的实验数据,进行了适当的实验。文中详细讨论了实验设置和估计算法。从开发人员和消费者的角度比较和进一步分析信号的使用情况。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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