Simulation of non-classical faults on the gate level-fault modeling

J. Alt, U. Mahlstedt
{"title":"Simulation of non-classical faults on the gate level-fault modeling","authors":"J. Alt, U. Mahlstedt","doi":"10.1109/VTEST.1993.313377","DOIUrl":null,"url":null,"abstract":"A two-step approach is used to increase the accuracy of fault modeling without sacrificing the efficiency of fault simulation and test pattern generation on the gate level. First, low level faults are mapped onto the gate level and a data base with gate level faults is created. In a second step, fault simulation is performed using this data base. A gate level fault simulator has been modified to perform the simulations. This paper describes the first step and presents a method which maps low level faults onto gate level faults. Existing gate level fault models are extended and new gate level fault models are introduced. In order to demonstrate the feasibility of the approach electrical level shorts and opens have been mapped onto gate level faults for two typical CMOS libraries. For these libraries all shorts and opens can be described accurately by gate level faults.<<ETX>>","PeriodicalId":283218,"journal":{"name":"Digest of Papers Eleventh Annual 1993 IEEE VLSI Test Symposium","volume":"131 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers Eleventh Annual 1993 IEEE VLSI Test Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTEST.1993.313377","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18

Abstract

A two-step approach is used to increase the accuracy of fault modeling without sacrificing the efficiency of fault simulation and test pattern generation on the gate level. First, low level faults are mapped onto the gate level and a data base with gate level faults is created. In a second step, fault simulation is performed using this data base. A gate level fault simulator has been modified to perform the simulations. This paper describes the first step and presents a method which maps low level faults onto gate level faults. Existing gate level fault models are extended and new gate level fault models are introduced. In order to demonstrate the feasibility of the approach electrical level shorts and opens have been mapped onto gate level faults for two typical CMOS libraries. For these libraries all shorts and opens can be described accurately by gate level faults.<>
非经典故障模拟的门级故障建模
在不牺牲门级故障仿真和测试模式生成效率的前提下,采用两步法提高了故障建模的精度。首先,将低级故障映射到门级,并创建门级故障数据库。在第二步中,使用该数据库进行故障模拟。对栅极级故障模拟器进行了改进以进行仿真。本文描述了第一步,提出了一种将低电平故障映射到门电平故障的方法。对已有的门级故障模型进行了扩展,并引入了新的门级故障模型。为了证明该方法的可行性,我们将两个典型CMOS库的电电平短路和开路映射到栅极电平故障上。对于这些库,所有短路和开路都可以用门级故障准确地描述
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