Shiyu Song, Feibo Du, Fei Hou, Wenqiang Song, Zhiwei Liu, Jizhi Liu
{"title":"A New dual directional SCR with high holding voltage for High Voltage ESD protection","authors":"Shiyu Song, Feibo Du, Fei Hou, Wenqiang Song, Zhiwei Liu, Jizhi Liu","doi":"10.1109/EDSSC.2019.8754152","DOIUrl":null,"url":null,"abstract":"In this paper, A novel high holding voltage dual-directional SCR (HHV-DDSCR) is proposed. The ESD I-V characteristics of HHV-DDSCR and DDSCR (dual-directional SCR) are simulated with the Sentaurus TCAD software. Compared with the DDSCR, the new HHV-DDSCR dramatically increases the holding voltage from 2V to 14V with relatively stable trigger voltage, which can provide efficient ESD protection for high voltage (HV) ICs. Besides, the influence of the parasitic BJTs in HHV-DDSCR on the device performance has also been studied.","PeriodicalId":183887,"journal":{"name":"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2019.8754152","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
In this paper, A novel high holding voltage dual-directional SCR (HHV-DDSCR) is proposed. The ESD I-V characteristics of HHV-DDSCR and DDSCR (dual-directional SCR) are simulated with the Sentaurus TCAD software. Compared with the DDSCR, the new HHV-DDSCR dramatically increases the holding voltage from 2V to 14V with relatively stable trigger voltage, which can provide efficient ESD protection for high voltage (HV) ICs. Besides, the influence of the parasitic BJTs in HHV-DDSCR on the device performance has also been studied.