{"title":"Yield analysis for a large-area analog X-ray sensor array","authors":"W.R. Einsenstadt, S. Potluri, K.J. Rambo, R. Fox","doi":"10.1109/UGIM.1991.148140","DOIUrl":null,"url":null,"abstract":"A small-scale CMOS-based radiographic X-ray image sensor array has been developed for nondestructive test and medical imaging. The authors present an analysis of tradeoffs between yield and area of a scaled up large-area X-ray sensor design. The X-ray sensor array can tolerate a low level of faults in the individual pixel cells and these faults can be corrected by imaging software. However, global signal line faults cause X-ray sensor failures. This work models X-ray sensor yield in a 12-layer analog CMOS process for three possible overall defect densities, 1.5 defects/cm, 1.0 defects/cm, and 0.75 defects/cm. It is shown that the X-ray sensor is more manufacturable than a charge coupled device (CCD) array of the same area.<<ETX>>","PeriodicalId":163406,"journal":{"name":"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/UGIM.1991.148140","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A small-scale CMOS-based radiographic X-ray image sensor array has been developed for nondestructive test and medical imaging. The authors present an analysis of tradeoffs between yield and area of a scaled up large-area X-ray sensor design. The X-ray sensor array can tolerate a low level of faults in the individual pixel cells and these faults can be corrected by imaging software. However, global signal line faults cause X-ray sensor failures. This work models X-ray sensor yield in a 12-layer analog CMOS process for three possible overall defect densities, 1.5 defects/cm, 1.0 defects/cm, and 0.75 defects/cm. It is shown that the X-ray sensor is more manufacturable than a charge coupled device (CCD) array of the same area.<>