Electronic and optical properties of Dirac semimetals in InAs/GaInSb superlattice nanostructures

M. Patrashin, N. Sekine, K. Akahane, A. Kasamatsu, I. Hosako
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Abstract

In this work we discuss technological aspects of creating a linear energy dispersion spectrum of charge carriers in semiconductor materials and report on the experimental realization of the topological Dirac semimetals (DSM) in nanostructurally engineered zero-gap InAs/GaInSb superlattices (SL) [1]. The SL samples are synthesized by molecular beam epitaxy, which provides monolayer accuracy for growing high-quality single-crystals on large area substrates. The prospects for designing the topological insulator (TI) SLs with the same approach and first results of experimental characterization of the TI candidates are also presented.
InAs/GaInSb超晶格纳米结构中Dirac半金属的电子和光学性质
在这项工作中,我们讨论了在半导体材料中创建电荷载流子线性能量色散谱的技术方面,并报告了拓扑狄拉克半金属(DSM)在纳米结构工程的零间隙InAs/GaInSb超晶格(SL)中的实验实现[1]。SL样品是通过分子束外延合成的,为在大面积衬底上生长高质量的单晶提供了单层精度。展望了用相同的方法设计拓扑绝缘体(TI) SLs的前景,并介绍了TI候选材料的初步实验表征结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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