A Ku-band 40W high efficiency solid-state power amplifier

K. Mori, Y. Sakai, S. Tsuji, H. Asao, K. Seino, H. Hirose, T. Takagi
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引用次数: 4

Abstract

A Ku-band 40W high efficiency solid-state power amplifier (SSPA) has been developed. In order to achieve high efficiency, a Ku-band high efficiency internal-matched HFET and a small size and a low loss wave-guide combiner are developed and employed. The developed HFET achieves a power-added efficiency (PAE) of 37.5% and P1dB of 41.8dBm at base temperature (Tb) of 40degC. The source and load impedance of the HFET are matched to the optimum impedances for high temperature. The developed HFET achieves PAE of 33.8% and P1dB of 41.1 dBm over temperature range from -15 to 100 degC. The developed wave-guide combiner achieves insertion loss of less than 0.1dB. A Ku-band SSPA has been developed by using these components. It achieves an output power of 47.3 dBm (53.7W) and PAE of 25.6% at 14.2GHz and Tb of 25 degC, and achieves an output power of 46.4 dBm (43.6W), PAE of more than 21.9% and a linear gain of 36 dB at 14.0-14.4GHz over the temperature range from -15 to 95degC.
一种ku波段40W高效固态功率放大器
研制了一种ku波段40W高效固态功率放大器(SSPA)。为了实现高效率,研制并采用了ku波段高效率内匹配HFET和小尺寸低损耗波导合成器。所开发的HFET在基准温度(Tb)为40℃时的功率附加效率(PAE)为37.5%,P1dB为41.8dBm。HFET的源阻抗和负载阻抗匹配到高温下的最佳阻抗。开发的HFET在-15 ~ 100℃的温度范围内,PAE为33.8%,P1dB为41.1 dBm。该波导合成器的插入损耗小于0.1dB。利用这些元件研制了ku波段SSPA。在14.2GHz和25℃的温度范围内,它的输出功率为47.3 dBm (53.7W), PAE为25.6%;在-15 ~ 95℃的温度范围内,它的输出功率为46.4 dBm (43.6W), PAE大于21.9%,在14.0 ~ 14.4 ghz的温度范围内线性增益为36 dB。
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