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Computational Study of the Electrical Properties of LD-LaSrMnO3 for Usage as Ferromagnetic Layer in MTJ Memory Device

Advances in Communication, Devices and Networking Pub Date : 2021-08-31 DOI:10.1007/978-981-16-2911-2_6
Abinash Thapa, P. C. Pradhan, B. Sharma
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MTJ存储器件用LD-LaSrMnO3铁磁层电学性能的计算研究
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Advances in Communication, Devices and Networking
Advances in Communication, Devices and Networking
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