Design of SB-GNRFET and D-GNRFET using QuantumATK

Abstract

In recent days, graphene nanoribbon field-effecttransistors (GNRFETs) are considered as promising candidate in semiconductor technology because it’s outstanding properties such as large mobility, strength, and electrical conductivity. The design of Schottky barrier GNRFET (SBGNRFET) and doped GNRFET (D-GNRFET) are presented in this work to investigate their performance in terms of ON and OFF currents, I-V curves and transconductance. The presented transistors are developed in the QuantumATK simulator. The D-GNRFET shows high-performance over the SB-GNRFET due to the doping concentrations. The results of the transistors are produced by non-equilibrium Green’s function. The Poisson condition solver is utilized to evaluate electrostatic potential.