System level analysis and benchmarking of graphene interconnects for low-power applications

Vachan Kumar, R. Nashed, K. Brenner, Romeil Sandhu, A. Naeemi
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引用次数: 3

Abstract

Stochastic wiring distribution models are used to predict the improvement in energy obtained by replacing a few or all copper metal levels with graphene nanoribbons (GNRs) in a low-power digital circuit. The models developed here also estimate the degradation in the performance by replacing a few or all copper metal levels with GNRs. Replacing a few local copper interconnect levels with GNRs is expected to reduce the energy consumed by local interconnects, without severely degrading the performance of longer global interconnects. The hybrid GNR+copper interconnect is shown to perform worse compared to the all GNR interconnect, if the length of the GNR segment is greater than a critical value. For a logic circuit with 30k gates, it is shown that the hybrid interconnect offers a 30 to 40% decrease in energy and a 4× decrease in maximum frequency, whereas the all GNR interconnect offers a 50 to 60% decrease in energy and a 7× decrease in maximum frequency. Further, the impact of edge doping on the resistance per unit length of graphene is analyzed.
低功耗应用中石墨烯互连的系统级分析和基准测试
在低功耗数字电路中,采用随机布线分布模型来预测用石墨烯纳米带(gnr)取代部分或全部铜金属层所获得的能量改善。这里开发的模型还通过用gnr替换部分或全部铜金属水平来估计性能的下降。用gnr取代一些局部铜互连层有望减少局部互连消耗的能量,而不会严重降低较长全局互连的性能。如果GNR段的长度大于临界值,则混合GNR+铜互连的性能比所有GNR互连的性能更差。对于具有30k门的逻辑电路,表明混合互连提供了30 - 40%的能量降低和4倍的最大频率降低,而所有GNR互连提供了50 - 60%的能量降低和7倍的最大频率降低。进一步分析了边缘掺杂对石墨烯单位长度电阻的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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