Characteristics of relaxor-based piezoelectric single crystals for ultrasonic transducers

Seung-Eek Park, T. Shrout
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引用次数: 92

Abstract

For ultrasonic transducers, piezoelectric ceramics offer a range of dielectric constants (K/spl sim/1000-5000), large piezoelectric coefficients (d/sub ij//spl sim/200-700 pC/N), and high electromechanical coupling (k/sub T//spl cong/50%, k/sub 33//spl cong/75%). For several decades, the material of choice has been polycrystalline ceramics based on the solid solution Pb(Zr/sub 1-x/,Ti/sub x/)O/sub 3/ (PZT), compositionally engineered near the morphotropic phase boundary (MPB). The search for alternative MPB systems has led researchers to revisit relaxor-based materials with the general formula Pb(B/sub 1/,B/sub 2/)O/sub 3/ (B/sub 1/:Zn/sup 2+/, Mg/sup 2+/, Sc/sup 3+/, Ni/sup 2+/..., B/sub 2/:Nb/sup 5+/, Ta/sup 5+/...). There are some claims of superior dielectric and piezoelectric performance compared to that of PZT materials. However, when the properties are examined relative to transition temperature (Tc), these differences are not significant. In the single crystal form, however, relaxor-PT materials, represented by Pb(Zn/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbTiO/sub 3/ (PZN-PT), Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbTiO/sub 3/ (PMN-PT) have been found to exhibit longitudinal coupling coefficients (k/sub 33/)>90%, thickness coupling (k/sub T/)>63%, dielectric constants ranging from 1000 to 5000 with low dielectric loss <1%, and exceptional piezoelectric coefficients d/sub 33/>2000 pC/N, the latter promising for high energy density actuators. For single crystal piezoelectrics to become the next generation material of ultrasonic transducers, further investigation in crystal growth, device fabrication and testing are required.
超声换能器用弛豫型压电单晶的特性研究
对于超声波换能器,压电陶瓷提供了一系列介电常数(K/spl sim/1000-5000),大的压电系数(d/sub ij//spl sim/200-700 pC/N)和高机电耦合(K/ sub T//spl长/50%,K/ sub 33//spl长/75%)。几十年来,选择的材料一直是基于固溶体Pb(Zr/sub - 1-x/,Ti/sub -x/)O/sub - 3/ (PZT)的多晶陶瓷,在偏向形态相边界(MPB)附近进行成分工程。寻找可替代的MPB系统使研究人员重新审视了基于弛豫剂的材料,其通式为Pb(B/sub 1/,B/sub 2/)O/sub 3/ (B/sub 1/:Zn/sup 2+/, Mg/sup 2+/, Sc/sup 3+/, Ni/sup 2+/…, B/sub 2/:Nb/sup 5+/, Ta/sup 5+/…)。与PZT材料相比,有一些声称具有优越的介电和压电性能。然而,当性能相对于转变温度(Tc)进行检查时,这些差异并不显著。在单晶形式下,以Pb(Zn/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbTiO/sub 3/ (PZN-PT)、Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbTiO/sub 3/ (PMN-PT)为代表的弛豫- pt材料表现出纵向耦合系数(k/sub 33/)>90%,厚度耦合(k/sub T/)>63%,介电常数在1000 ~ 5000之间,介电损耗为2000 pC/N,有望成为高能量密度致动器。单晶压电材料要想成为下一代超声换能器材料,还需要在晶体生长、器件制造和测试等方面进行进一步的研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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