Switching Characteristics of a-ITZO Based Thin Film Transistor

Abstract

-This study examines the thickness of SiO 2 dielectric materials in a-ITZO TFT using a numerical simulation performed by the Silvaco Atlas software. The switching characteristics of the device are investigated. The thickness of dielectric oxide material varies significantly between 180 nm and 50 nm, and device characteristics are studied. The significant results as threshold voltage of -0.65 V, mobility of 16.51 cm 2 V -1 s -1 , sub-threshold swing 0.049 V/dec and I on /I off of 1.43x10 11 is obtained in simulation of ITZO TFT for 50 nm optimum SiO 2 dielectric material thickness. The switching characteristics of the device are also affected by the use of high k dielectric material. The simulation results for an a-ITZO TFT(high k dielectric material) include a V T of -0.42 V, 𝜇 of 31.15 cm 2 V -1 s -1 , S of 0.034 V/dec, and I on /I off of 1.71x10 10 .