The effect of DMOS cell geometry on the integrated current sensors of high-voltage power MOSFETs

Abstract

The integrated current-sensing power MOSFET is used in power electronics to implement system control, protective and diagnostic function. This paper compares integrated current-sensing power MOSFETs with the square (SQ) and atomic-lattice-layout (ALL) design. It is shown that the ALL design offers better performance than that with the SQ cell design.