Novel emitter controlled diode with copper metallization in ultrathin wafer technology: Setting a performance benchmark

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Pub Date : 2017-05-01 DOI:10.23919/ISPSD.2017.7988941

F. Rodriguez, D. Schloegl, F. Hille, P. Brandt, M. Pfaffenlehner, A. Stegner, A. Haertl

引用次数: 4

Abstract

Electrical characterization results (e.g. softness, cosmic ray hardness, surge current) of a novel freewheeling diode with reduced thickness and copper metallization are shown.

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超薄晶圆技术中新型铜金属化发射极控制二极管:设定性能基准

本文给出了一种厚度减小、铜金属化的新型自由旋转二极管的电学表征结果(如柔软度、宇宙射线硬度、浪涌电流)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

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