Extrapolation Pitfalls When Evaluating Limited Endurance Memory

Rishiraj A. Bheda, Jesse G. Beu, Brian P. Railing, T. Conte
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引用次数: 1

Abstract

Many new non-volatile memory technologies have been considered as a future scalable alternative to DRAM. Memory technologies such as MRAM, FeRAM, PCM have emerged as the most viable alternatives. But these memories have limited wear endurance. Practically realizable main memory systems employing these memory technologies are possible only if the wear across these memories is reduced as well as uniformly distributed. Limited endurance has resulted in extensive wear leveling research with the goal of uniformly distributing write traffic throughout available physical memory. Basic support for wear leveling is already present in existing systems, in the form of operating system paging. The Operating System (OS) changes virtual to physical translations over time. As a result, write traffic is naturally spread out. Proper evaluation of the need for wear leveling as well as the impact of the corresponding technique must take this phenomenon into account. Ignoring the effect of OS paging mechanism can result in highly inaccurate memory lifetime extrapolations. We demonstrate through simulation results, the effects of inaccurate extrapolations in the absence of OS modeling. Accurate memory lifetime simulation can take from many months to years. Although sampling techniques are commonly employed for speedup, our results show that naïve extrapolation techniques can lead to wildly different lifetime estimates. We show how sampling can be accurately applied by accounting for the different components in the write stream observed by main memory. Finally, we present a heuristic to quickly estimate memory lifetime for a given application.
评估有限耐力记忆时的外推陷阱
许多新的非易失性存储器技术被认为是未来可扩展的DRAM替代品。存储器技术如MRAM, FeRAM, PCM已经成为最可行的替代方案。但这些记忆体的耐磨性有限。采用这些存储器技术的主存储器系统只有在减少这些存储器之间的磨损并均匀分布的情况下才有可能实现。有限的耐用性导致了广泛的磨损均衡研究,其目标是在可用的物理内存中均匀分布写流量。对损耗均衡的基本支持已经以操作系统分页的形式存在于现有系统中。操作系统(OS)会随着时间的推移将虚拟转换为物理转换。因此,写流量自然地分散开来。正确评估磨平的必要性以及相应技术的影响必须考虑到这一现象。忽略操作系统分页机制的影响可能导致非常不准确的内存生命周期推断。我们通过模拟结果证明,在没有OS建模的情况下,不准确的外推的影响。准确的内存寿命模拟可能需要几个月到几年的时间。虽然采样技术通常用于加速,但我们的结果表明naïve外推技术可能导致截然不同的生命周期估计。我们展示了如何通过计算主存观察到的写流中的不同组件来准确地应用采样。最后,我们提出了一种启发式方法来快速估计给定应用程序的内存生命周期。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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