Negative Fixed Threshold Voltage on NFinFET Current-Voltage Characteristics Curves

Hsin-Chia Yang, You-Sheng Lin, Zhe-Wei Lin, Tzu-Chien Chen, Sheng-Ping Wen, Chen-yu Tsai, Kuan-Hung Chen, Pei-Jun Yang, Chia-Chun Lin, Chang-Ping Hsu, Chen-Chien Tsai, Yu-Tsung Liao, Sung-Ching Chi
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Abstract

FinFET, another transformed type of MOSFET with the conventional mechanism, does effectively suppress the leakage current even as the channel length reduces to tens of nanometers. The whole transistor is switched on or off depending on a threshold voltage. The whole transistor may own a threshold voltage, which is associated with the band structure, dose concentration, and gate capacitor. The electrical performances may be demonstrated by the curves of current versus applied voltages. Those curves are then put through fitting by (1) and (2), in which the threshold voltage, Kn, and λ are to be determined. Therefore, based on a transistor and a chosen fixed threshold voltage, Kn is λ are decided making minimum the deviation in (3). Various threshold voltages accompany with various sets of Kn and λ. The final threshold voltage of a specific transistor is selected and made conclusively fixed through the minimum among all the total minimums.
NFinFET电流-电压特性曲线的负固定阈值电压
FinFET是另一种具有传统机制的MOSFET转换类型,即使沟道长度减少到几十纳米,也能有效抑制泄漏电流。整个晶体管的开关取决于一个阈值电压。整个晶体管可能具有一个阈值电压,该阈值电压与带结构、剂量浓度和栅极电容有关。电学性能可以用电流对外加电压的曲线来证明。然后将这些曲线通过(1)和(2)进行拟合,其中将确定阈值电压,Kn和λ。因此,根据一个晶体管和选定的固定阈值电压,确定Kn和λ,使(3)中的偏差最小。不同的阈值电压伴随着不同的Kn和λ集合。选择特定晶体管的最终阈值电压,并通过所有总最小值中的最小值确定。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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