The Performance Study of MOSFET based MEMS Pressure Sensor with Partially Active Voltage Divider Readout Circuit

Abstract

The performance of metal-oxide-semiconductor field-effect transistor (MOSFET) based microelectromechanical system (MEMS) pressure sensor readout circuit studied for various diaphragm geometry at fixed pressure which applied at the center. The role of conversion of pressure to electrical signal primarily carried out by the piezoresistive phenomenon that involves variation of carrier’s mobility with in the channel of MOSFET. The MEMS pressure sensor is composed of MOSFET located near to fixed edge deformable silicon diaphragm and partially active voltage divider readout circuit. The variation of average stress, carrier mobility and output voltage for various diaphragm width and thickness studied by keeping the pressure fixed. COMSOL Multiphysics simulation tool is used to design the MOSFET and the diaphragm. And LTSpice used to design the sensor circuit and compute their output. Finally, by integrating both simulation tool using MATLAB script, we have studied the performance of the sensor readout circuit under the variation of geometric parameters.