Enhanced heat spreading in LTCC packages utilizing thick silver tape in the co-fire process

T. Welker, N. Gutzeit, Jens Müller
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引用次数: 4

Abstract

The integration density in semiconductor devices has significantly increased in the last years. This trend is already described by Moore's law what forecasts a doubling of the integration density every two years. This evolution makes greater demands on the substrate technology which is used for the first level interconnect between the semiconductor and the device package. Higher pattern resolution is required to connect more functions on a smaller chip. Also the thermal performance of the chip carrying substrate is a crucial issue. The increased integration density leads to a higher power density, thus more heat has to dissipate on a smaller area. Thus, substrates with a high thermal conductivity (e. g. direct bonded copper (DBC)) are utilized. However, the reduced pattern resolution caused by thick metal layers is disadvantageous for this substrate technology. Alternatively, low temperature co-fired ceramic (LTCC) can be used. This multilayer technology provides high pattern resolutions in combination with high integration grades. The poor thermal conductivity of LTCC (3 to 5 W/(m-K) requires thermal vias made of silver paste which are placed between the power chip and the heat sink to reduce the thermal resistance of the substrate. The via-pitch and diameter is technologically limited, what allows a maximum filling grade of approx. 20 %. Heat spreading inside LTCC substrates is commonly realized with thick film printed metal layers which connect a smaller via matrix in the upper layer with larger via matrix in the following layer. However the heat spreading capability of these structures is limited due to the relatively low achievable metal layer thickness applying a standard screen printing process. In the presented investigation, a thick silver tape is used to form a thick silver heat spreader inside the LTCC substrate. The substrate consists of 4 layers LTCC DP951. In the top layer 36 silver vias with a diameter of 250 μm and a pitch of 500 μm are placed in a 3 × 3 mm2 substrate area. An opening is structured in the following layer by laser cutting, which is filled with a laser cut silver tape to form a 7 × 7 mm2 heat spreader. In each following layer 196 silver vias with the same pitch and diameter as the vias in the top layer are placed in a 7 × 7 mm2 area. The layers are stacked together, laminated and sintered utilizing a pressure assisted sintering process. The thermal performance of the substrate was investigated by means of simulations and measurements. A package comprising of the LTCC substrate and a thermal test chip was realized to measure the thermal performance. A thermal resistance of 2.6 K/W was evaluated for the package with integrated full metal heat spreader during these measurements. Compared to a package having a standard via structure instead of the introduced silver heat spreader a reduction of 30.5 % of the thermal resistance was achieved. Advantages of the presented heat spreader are achievable low thermal resistances and simple embedding capabilities in the co-fire LTCC process flow.
在共火过程中利用厚银带增强LTCC封装中的热扩散
半导体器件的集成密度在过去几年中显著增加。摩尔定律已经描述了这种趋势,摩尔定律预测每两年集成密度会翻一番。这种演变对用于半导体和器件封装之间的第一级互连的衬底技术提出了更高的要求。更高的模式分辨率需要在更小的芯片上连接更多的功能。此外,芯片承载衬底的热性能也是一个关键问题。增加的集成密度导致更高的功率密度,因此更多的热量必须在更小的面积上消散。因此,利用了具有高导热性的衬底(例如直接键合铜(DBC))。然而,由于金属层厚导致的图案分辨率降低,不利于这种基板技术的发展。或者,可以使用低温共烧陶瓷(LTCC)。这种多层技术提供了高模式分辨率和高集成度。LTCC的导热性差(3 ~ 5w /(m-K)),需要在电源芯片和散热器之间放置由银浆制成的热通孔,以减少基板的热阻。通孔间距和直径在技术上是有限的,因此允许的最大填充等级约为。20%。LTCC基板内部的热扩散通常通过厚膜印刷金属层来实现,该金属层将上层较小的通孔矩阵与下一层较大的通孔矩阵连接起来。然而,由于采用标准丝网印刷工艺可实现的金属层厚度相对较低,这些结构的散热能力受到限制。在本研究中,使用厚银带在LTCC衬底内形成厚银散热器。衬底由4层LTCC DP951组成。在顶层,36个直径为250 μm,间距为500 μm的银通孔放置在3 × 3 mm2的衬底区域中。通过激光切割在下一层形成一个开口,该开口由激光切割银带填充,形成一个7 × 7 mm2的散热器。在接下来的每一层中,196个与顶层孔具有相同间距和直径的银孔被放置在一个7 × 7 mm2的区域中。层叠在一起,层压和利用压力辅助烧结工艺烧结。通过模拟和测量研究了该衬底的热性能。实现了由LTCC衬底和热测试芯片组成的热性能测试封装。在这些测量中,对集成全金属散热器的封装进行了2.6 K/W的热阻评估。与具有标准通孔结构的封装相比,而不是引入银散热器,热阻降低了30.5%。该散热器的优点是在共火LTCC工艺流程中可以实现低热阻和简单的嵌入能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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