Positive-Tone E-Beam Lithography With Surface Silylation Of Negative-Tone Commercial Photoresists Sal 601 And AZPN 114

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Pub Date : 1998-07-13 DOI:10.1109/IMNC.1998.730074

E. Tegou, E. Gogolides, P. Argitis, Z. Cui

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Abstract

POSITIVE-TONE E-BEAM LITHOGRAPHY WITH SURFACE SILYLATION OF NEGATIVE-Tom COMMERCIAL PHOTORESISTS SAL 601. AND AZPN 1 14. Evangelia Tegou, Evangelos Gogolides, Panagiotis Argitis and Zheng Cui” Institute of Microelectronics IMEL, NCSR “Demokritos”, PO Box 60228, Aghia Paraskevi, Attiki Greece 153 10 aCentral Microstructure Facility, Rutherford Appleton Laboratory, Chilton Didcot, Oxon, OX1 1 OQX, UK

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负色调商用光阻Sal 601和AZPN 114表面硅基化的正色调电子束光刻

正色调电子束光刻与表面硅基化的负tom商业光阻SAL 601。azp114。Evangelia Tegou, Evangelos Gogolides, Panagiotis Argitis和Zheng Cui“微电子学研究所，NCSR“Demokritos”，邮政邮箱60228,Aghia Paraskevi，希腊Attiki 15310中心微结构设施，卢瑟福阿普尔顿实验室，牛津Chilton Didcot, ox11 OQX，英国

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)

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