Effect of parameter variation in UTBB FDSOINCFET

Abstract

In this work we have investigated the performance of UTBB FDSOI-NCFET with different dielectric and gate materials. Variation in ION/IOFF and subthreshold swing with these parameters has also been studied. Effect of varying ferroelectric properties such as coercive field and remanent polarization has been demonstrated. The basic idea here is to find out an optimum configuration for dielectric and gate materials which should be used so as to get better performance of the device. We have validated our simulation using TCAD simulator. Here, we have taken PZT (Lead zirconium titnate) as a ferroelectric material because it possesses many advantages like high dielectric constant and nano-second polarization reversal. This device is a unique amalgamation of Negative capacitance transistor and FDSOI. Negative capacitance provides low subthreshold swing and FDSOI ensures suppression of short channel effects and hence UTBB FDSOI-NCFET is a viable candidate for future low power transistors.