10W Class High Power C-Band Rectifier Using GaN HEMT

Abstract

This paper demonstrates fundamental evaluation results of a C-band rectifier using gallium nitride (GaN) high electron mobility transistor (HEMT). To achieve rectification at high power range, the GaN HEMT is utilized. TGF2023-2-05 of Qorvo is used for the HEMT. A rectifier circuit is designed on a RO4350B substrate. Only fundamental wave matching is considered. The designed rectifier is fabricated and measured. Maximum rectification efficiency of 44.8 % at 5.78 GHz while the load resistance is $20\Omega$ is obtained from the measurement. Maximum output DC power is 9661 mW when RF input power is 44.2dBm.