{"title":"Control of spatial structures in a semiconductor-gas discharge system with a semi-insulating GaAs cathode","authors":"E. Gurevich, Y. Astrov, H. Purwins","doi":"10.1109/PHYCON.2003.1237027","DOIUrl":null,"url":null,"abstract":"Nonlinear current transport in transversely extended gas discharge system with a semi-insulating GaAs cathode is studied. The emerging spatial patterns appear in the semiconductor electrode, while the application of a thin gas-discharge gap allows to visualize the patterns. Sequences of scenarios in the pattern formation under changing control parameters are presented. It is experimentally shown that the dynamics of the structure is not noticeably influenced by inhomogeneities of the experimental system. Among results obtained, variation of scenarios under changing the temperature of the GaAs electrode are presented.","PeriodicalId":438483,"journal":{"name":"2003 IEEE International Workshop on Workload Characterization (IEEE Cat. No.03EX775)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 IEEE International Workshop on Workload Characterization (IEEE Cat. No.03EX775)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PHYCON.2003.1237027","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Nonlinear current transport in transversely extended gas discharge system with a semi-insulating GaAs cathode is studied. The emerging spatial patterns appear in the semiconductor electrode, while the application of a thin gas-discharge gap allows to visualize the patterns. Sequences of scenarios in the pattern formation under changing control parameters are presented. It is experimentally shown that the dynamics of the structure is not noticeably influenced by inhomogeneities of the experimental system. Among results obtained, variation of scenarios under changing the temperature of the GaAs electrode are presented.