A bit-interleaved embedded hamming scheme to correct single-bit and multi-bit upsets for SRAM-based FPGAs

Shyamsundar Venkataraman, Rui Santos, Anup Das, Akash Kumar
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引用次数: 10

Abstract

Single Event Upsets (SEUs) inadvertently change the configuration bits of Static-RAM (SRAM)-based Field Programmable Gate Arrays (FPGAs), leading to erroneous output until the error has been corrected. Scrubbing using an Error Correction Code (ECC) such as hamming is a popular method to correct such faults. However, current works either require a large external memory to store the ECCs or can at most correct only one error in a frame. This paper proposes a novel bit-interleaved embedded hamming scheme along with scrubbing, to correct single (SBUs) and multi-bit upsets (MBUs) in SRAM-based FPGAs. This scheme does not require an external memory to store the ECCs, as they are embedded within the configuration memory itself. Experiments conducted on various benchmarks show that the proposed scheme can handle multiple errors per frame very well, with an embedding efficiency of over 99.3%.
一种位交错嵌入式汉明方案,用于校正基于sram的fpga的单位和多位干扰
单事件干扰(seu)无意中改变了基于静态ram (SRAM)的现场可编程门阵列(fpga)的配置位,导致错误输出,直到错误被纠正。使用错误纠正码(Error Correction Code, ECC)(如hamming)进行清洗是纠正此类故障的常用方法。然而,目前的工作要么需要一个大的外部存储器来存储ecc,要么最多只能纠正一个帧中的一个错误。本文提出了一种新的位交错嵌入式汉明方案,并结合刷洗技术来校正基于sram的fpga中的单(SBUs)和多(MBUs)扰流。该方案不需要外部内存来存储ecc,因为它们嵌入在配置内存本身中。在各种基准测试中进行的实验表明,该方案可以很好地处理每帧的多个错误,嵌入效率达到99.3%以上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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