Electro-absorption and refraction at 1.5 /spl mu/m in InGaAs/AlGaAs superlattice growth on GaAs substrate

Abstract

High indium concentration In/sub 0.65/Ga/sub 0.35/As/Al/sub 0.33/Ga/sub 0.67/As superlattices on GaAs substrates are useful for modulators and optical communication applications. This is due to the lowest loss 1.55 /spl mu/m optimum wavelength for operation of fiber optic systems. The optical parameters such as absorption coefficient and change in refractive index with applied electric field are investigated.