Design of a Simple Readout Circuit for Resistive Switching Memristors Based on CMOS Inverters

G. A. Sanca, F. D. Francesco, N. Caroli, M. Garcia-Inza, F. Golmar
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引用次数: 2

Abstract

In this paper a CMOS reading circuit for memristor-based RRAM (Resistive Random Access Memory) cell is described. Simulations for one cell, 4 by 4 nMOS-accessed-array and extension to N by N nMOS-accessed-array are presented. The proposed circuit is based on CMOS inverters, which result in a simple low area architecture and in a non-destructive operation. Resistive switching memristor is used as reading reference. Simulations were performed in $0.5\ \mu \text{m}$ and 180 nm CMOS technology and using memristor model available in bibliography.
基于CMOS逆变器的简单电阻开关忆阻器读出电路设计
本文介绍了一种基于忆阻器的RRAM(电阻式随机存取存储器)单元的CMOS读取电路。给出了单单元、4 × 4 nmos接入阵列和扩展到N × N nmos接入阵列的仿真。该电路基于CMOS逆变器,具有简单的低面积结构和非破坏性操作。电阻开关忆阻器作为读基准。仿真在$0.5\ \mu \text{m}$和180 nm CMOS技术下进行,并使用参考文献中的忆阻器模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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