New nonlinear device model for microwave power GaN HEMTs

Abstract

This paper presents a new nonlinear device model, for microwave power GaN HEMTs, amenable for integration into a commercial harmonic balance simulator. All the steps taken to extract it are explained, starting with the extrinsic elements' determination and ending with the intrinsic ones. This model was validated by comparing measured and simulated output power and intermodulation distortion data of a GaN HEMT. Very good agreement was obtained from small- to large-signal excitation regimes.