Improved modulation bandwidth of strained quantum well lasers by coupled with n-type /spl delta/-doped layer

Abstract

Improved dynamic properties of strained single quantum well (QW) laser are obtained by adding an n-type /spl delta/-doping to the active layer. The increased modulation bandwidth is attributed to the enhancement of capture in the QW. The design was performed by calculating the overall potential profile, by combining the analytical solution of /spl delta/-doping with the squared potential of a finite strained In/sub x/Ga/sub 1-x/As/GaAs QW.