Dielectric breakdown of Electromagnetic Metamaterials in the mean-field approximation

J. Boksiner, Timothy Bocskor
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Abstract

Electromagnetic Metamaterials (MTMs) are artificial materials with novel electromagnetic properties not available in nature. MTMs typically consist of a homogeneous host material containing appropriately configured embedded compact inclusions. MTMs have the potential to enable significant improvement on performance of low-profile (i.e. microstrip) and conformal antennas, including reduction of antenna size and antenna coupling. One key limitation for MTM implementation is the possibility of dielectric breakdown from electrical stresses such as high ambient electric fields arising from the transmitter itself, lightning and atmospheric charges, precipitation static (p-static), and electrostatic discharge (ESD). In this paper we investigate dielectric breakdown in the mean- field approximation. Dielectric breakdown is deemed to occur if the electric potential across an insulator exceeds a certain critical value, causing the insulator to become conductive and leading to failure of the insulator. Embedded conductive structures, such as those comprising MTMs, cause electric field enhancement near the metallic inclusion lowering the electric strength. We calculate the detailed electric field distribution within the MTM and compare the peak values to a critical breakdown field. Using the mean-field theory, we replace each inclusion by an equivalent dipole. The effect of remaining dipoles is taken into account by an effective field. The polarizability is determined by a self-consistent solution for the effective field. We determine the detailed field in the vicinity of the inclusion by summing the effective field and the local field due to the inclusion. We find that the presence of inclusions reduces the electric strength of the MTM in comparison to the electric strength of the pure host material. For a dilute MTM, the reduction depends mainly on the geometry of the inclusion. The reduction depends weakly on the concentration of the inclusions and is independent of the permittivity of the host material. The reduction may be significant even for very dilute MTMs and needs to be taken into account in practical applications. This work is an initial stage in CERDEC's effort to evaluate limitations to MTM parameters given the presence of intrinsic or environmental electromagnetic fields.
平均场近似下电磁超材料的介电击穿
电磁超材料是一种具有自然界中不存在的新型电磁特性的人工材料。mtm通常由均匀的宿主材料组成,其中包含适当配置的嵌入紧凑内含物。mtm有可能显著改善低轮廓(即微带)和共形天线的性能,包括减小天线尺寸和天线耦合。MTM实现的一个关键限制是电介质击穿的可能性,如由发射机本身产生的高环境电场、闪电和大气电荷、沉淀静电(p-static)和静电放电(ESD)。本文研究了平均场近似下的介质击穿问题。如果绝缘子上的电势超过某一临界值,使绝缘子发生导电并导致绝缘子失效,则认为发生了介电击穿。嵌入的导电结构,例如那些包含mtm的结构,在金属夹杂物附近引起电场增强,降低了电强度。我们计算了MTM内详细的电场分布,并将峰值与临界击穿场进行了比较。使用平均场理论,我们用一个等效的偶极子代替每个包含。有效场考虑了剩余偶极子的影响。极化率由有效场的自洽解决定。我们通过将有效场和夹杂引起的局部场相加来确定夹杂附近的详细场。我们发现,与纯基体材料的电强度相比,夹杂物的存在降低了MTM的电强度。对于稀MTM,还原主要取决于夹杂物的几何形状。还原对夹杂物浓度的依赖性较弱,与基体材料的介电常数无关。即使对于非常稀释的mtm,这种减少也可能是显著的,需要在实际应用中加以考虑。这项工作是CERDEC在固有或环境电磁场存在的情况下评估MTM参数限制的初步阶段。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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