Comparison of Measured Data Given by Automatized Measurement Methodology with the Analytical Expression of DLS MOSFET

Abstract

This paper introduces the latest modern automatized advanced measurement flow of the diamond layout shape MOS transistors (DLS MOSFETs) as well as the rectangular layout shape (RLS) MOSFETs directly on a wafer. There are presented photos of the DLS MOSFET, from the highest level of the wafer down to the lowest level of the wafer, where each photo is individually commented. The next part of this article presents each item of the proposed measurement flow, such as an air compressor, temperature forcing system, probe cards, and precision semiconductor parameter analyzer. Also, there is shown, a photo of the probe card used for the measurement, as well as planning of its needles. Besides others, there is describe four-points measurement strategy, and the last part of this paper recommends the minimum number of measurements in order to obtain relevant data. Finally, the measured data is compared with a theoretic analytical expression based on the Schwarz-Christoffel transformation.