Comparison of on-resistance of a power MOSFET by varying temperature

Proceedings IEEE Southeastcon '98 'Engineering for a New Era' Pub Date : 1998-04-24 DOI:10.1109/SECON.1998.673345

W. Lu, R. Mauriello, K. Sundaram, L. Chow

引用次数: 2

Abstract

The development of the power MOSFET allows an electronic circuit designer greater flexibility in high power switching applications. This experiment demonstrates that the on-resistance of a power MOSFET decreases significantly when the operating temperature decreases. A comparison of on-resistance is then generated at 77 K, 173 K, 243 K and 295 K to show the effect of cryogenic cooling.

查看原文本刊更多论文

不同温度下功率MOSFET导通电阻的比较

功率MOSFET的发展使电子电路设计人员在高功率开关应用中具有更大的灵活性。实验表明，当工作温度降低时，功率MOSFET的导通电阻显著降低。然后在77k、173k、243k和295k下对导通电阻进行了比较，以显示低温冷却的效果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Proceedings IEEE Southeastcon '98 'Engineering for a New Era'

自引率

0.00%

发文量