GaN based high brightness LEDs and UV LEDs

S. Denbaars, T. Katona, P. Cantu, A. Hanlon, S. Keller, M. Schmidt, T. Margalith, M. Pattisson, C. Moe, J. Speck, S. Nakamura
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Abstract

This talk summarizes the important materials and device results in gallium nitride based light emitter technology. GaN has emerged as the most promising material for high brightness LEDs with colors ranging from UV to blue, green, and white. Recent progress on ultra-violet (UV) emitting LEDs using AlGaN single quantum wells indicates wavelengths as short as 292 nm are achievable. UV LEDs are of great interest for solid state white lighting due to the high conversion efficiencies of typical phosphors in the UV spectrum. This paper focuses on recent progress in improving the properties of UV LEDs.
基于氮化镓的高亮度led和UV led
本文综述了氮化镓基光发射器技术中重要的材料和器件成果。GaN已成为高亮度led的最有前途的材料,其颜色范围从UV到蓝色,绿色和白色。使用AlGaN单量子阱的紫外线发光led的最新进展表明,波长短至292nm是可以实现的。由于紫外光谱中典型荧光粉的高转换效率,紫外led对固态白色照明非常感兴趣。本文重点介绍了近年来在提高紫外发光二极管性能方面的研究进展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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