Failure Analysis Challenges of Phase Change Memory Test Structures with Two Case Studies

J. Demarest, N. Arnold, K. Brew, V. Chan, A. Cote, T. Gordon, M. Iwatake, G. Lian, J. Li, I. Ok, S. Mcdermott, I. Saraf, N. Saulnier, L. Tierney, A. Varghese
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Abstract

There are several variants of artificial intelligence (AI) hardware structures which are under study by the semiconductor industry as potential future synergistic technology adders to existing complementary metal–oxide–semiconductor (CMOS) designs. This paper will discuss some of the failure analysis challenges which have appeared in discrete test structures and test arrays of an exploratory PCM program at IBM's Albany AI Hardware Research Center.
相变记忆测试结构失效分析挑战及两个案例分析
半导体行业正在研究人工智能(AI)硬件结构的几种变体,作为现有互补金属氧化物半导体(CMOS)设计的潜在未来协同技术。本文将讨论IBM奥尔巴尼人工智能硬件研究中心探索性PCM程序的离散测试结构和测试阵列中出现的一些故障分析挑战。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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