Influence of Stone Wales defect on magnetic resistance of zigzag graphene nanoribbons

Abstract

The electronic properties of zigzag graphene nanoribbons can be significantly modified from semiconducting to metallic states by change the atom's spin in graphene nano ribbons. In this paper, the impact of Stone-Wales defect on a Zigzag Graphene Nano-ribbon has been investigated for ferromagnetic and anti-ferromagnetic states. The Magnetic Resistance is calculated by applying Stone-Wales defect in the center of Graphene Nano-ribbons. The simulations are based on DFT method. The simulation results show that, by applying Stone-Wales defect, the bandgap increases in comparison to the ideal state, the conductivity decreases, and so does the current, and as a result of that, the Magnetic Resistance, at voltages below 0.5 V, decreases in comparison to the ideal state. At voltages above 0.5 V, the Magnetic Resistance increases in comparison to the ideal state. Also Magnetic Resistance can get negative values and reaches 650% at 1 V. The large tunable Magnetic Resistance of graphene nano ribbons is attractive to device applications.