Oxide Stack Engineered Double Surrounding Gate (OSE-DSG) MOSFET for Submillimeter Analog Application

Abstract

In this paper, we have proposed Oxide Stack Engineered Double Surrounding Gate (OSE-DSG) MOSFET For Submillimeter Analog Application using SILVACO ATLAS 3D device simulator. Here, we have shown the comparison between the simulated results of OSE-DSG and the traditional MOSFETs- Surrounding Gate (SG-MOSFET), Surrounding Gate with Gate Stack MOSFET (SG-GS MOSFET) and Double Surrounding Gate MOSFET (DSG MOSFET) to analyze its performance and applications. It is observed that OSE-DSG MOSFET shows better performance as it has high Drain Current, Current Gain, Transconductance (gm) and Maximam Transducer Power Gain (MTPG). The subthreshold slope obtained for OSE-DSG MOSFET is 65 mV/decade which is nearest to the ideal value of 60 mV/decade so it is highly desirable for high-frequency applications.