Design of SRAM array using 8T cell for low power sensor network

Colin David Karat, K. S. Krishna
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Abstract

The application of sensor networks varies from medical field to the military application. The raw data onto the sensor node is of large quantity and it is necessary to store these data bits. In this paper, design of optimized Static Random Access Memory (SRAM) array for the sensor application is implemented. SRAM cell is designed using 8T. The Half Select Condition Free Cross Point 8T SRAM is modified, using transmission gates as access transistors. By simulation, it is observed that the write-ability is enhanced and reduction in the power dissipation. Apart from the memory cell, the SRAM array has been constructed using the optimized peripheral circuits. Simulations show that reading and writing of data takes place correctly.
基于8T单元的SRAM阵列低功耗传感器网络设计
传感器网络的应用从医疗领域到军事领域都有不同的应用。传感器节点上的原始数据量很大,需要对这些数据位进行存储。本文针对传感器应用,设计了一种优化的静态随机存取存储器阵列。SRAM单元采用8T设计。对半选择条件自由交叉点8T SRAM进行了改进,使用传输门作为接入晶体管。仿真结果表明,该方法提高了系统的可写性,降低了系统的功耗。除了存储单元外,SRAM阵列还使用优化的外围电路构建。仿真结果表明,数据的读写是正确的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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