Ultra-Low Current Sensing from Femtoampere to Picoampere Range

Uygar Yildiz, Eren Uzun, Kemal Ozanoglu, Günhan Dündar
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Abstract

This work proposes design steps to form a sample analog electrometer front-end for an ultra-low current sensor in a 0.18μm CMOS technology, which is able to measure from femtoampere to picoampere range. The performance of ultra-low current sensor interfaces can be significantly deteriorated by leakage and noise of the system. The presented design offers significantly lower leakage current, which is independent of the input signal and variations in design parameters such as gain and offset, compared to the conventional integrator. In addition, the input current noise of the system is reduced by controlling the closed-loop bandwidth of the proposed interface. Analysis and simulations show the correct operation for the current values from 1fA to 1pA range with 11 bits linearity, the sensitivity of 400aA, and the input-referred maximum current noise of 360aA.
从飞安培到皮安范围的超低电流传感
这项工作提出了设计步骤,以形成一个0.18μm CMOS技术的超低电流传感器的样品模拟静电计前端,能够测量从飞安培到皮安的范围。超低电流传感器接口的性能会受到系统泄漏和噪声的严重影响。与传统的积分器相比,该设计提供了更低的泄漏电流,与输入信号和设计参数(如增益和偏置)的变化无关。此外,通过控制该接口的闭环带宽,降低了系统的输入电流噪声。分析和仿真表明,该电路在1fA ~ 1pA范围内具有11位线性,灵敏度为400aA,输入参考最大电流噪声为360aA的正确工作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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