Thermal analysis of high-power millimeter-wave Schottky diode frequency multipliers

C. Pérez-Moreno, J. Grajal, C. Viegas, Hairui Liu, J. Powell, B. Alderman
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引用次数: 7

Abstract

This work presents the thermal analysis of a Schottky diode frequency doubler capable of providing over 30 mW at 160 GHz at room temperature. This analysis includes thermal modeling of its structure and characterization at different temperature conditions. The modeling of different Schottky diode multiplier chip layouts indicates that the analyzed circuit uses the optimum configuration from the thermal point of view. Finally, the performance predicted by a physics-based numerical electro-thermal model for Schottky diodes integrated into a circuit simulator based on the harmonic balance technique is also presented and compared with measured data on the 160 GHz frequency doubler.
大功率毫米波肖特基二极管倍频器的热分析
这项工作提出了一个肖特基二极管倍频器的热分析,该倍频器在室温下能够在160 GHz下提供超过30 mW的频率。该分析包括其结构的热建模和在不同温度条件下的表征。对不同肖特基二极管乘法器芯片布局的建模表明,所分析的电路采用了从热角度考虑的最佳配置。最后,给出了基于谐波平衡技术的肖特基二极管集成电路模拟器的物理数值电热模型对肖特基二极管性能的预测,并与160 GHz倍频器的实测数据进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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